NP110N04PDG
500
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
400
V GS = 10 V
100
300
10
T A = ? 55°C
25°C
200
100
4.5 V
Pulsed
1
0.1
0.01
75°C
150°C
175°C
V DS = 10 V
Pulsed
0
0.001
0
0.2
0.4
0.6
0.8
1
1
2
3
4
5
6
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2.5
2
1.5
1
100
10
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T A = ? 55°C
25°C
75°C
150°C
175°C
0.5
0
V DS = V GS
I D = 10 mA
1
V DS = 10 V
Pulsed
-100
-50
0
50
100
150
200
0.1
1
10
100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
Pulsed
4
I D = 110 A
55 A
22 A
Pulsed
3
5
2
V GS = 4.5 V
1
10 V
0
0
0.1
1
10
100
1000
0
5
10
15
20
4
I D - Drain Current - A
Data Sheet D17561EJ2V0DS
V GS - Gate to Source Voltage - V
相关PDF资料
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相关代理商/技术参数
NP110N04PDG-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,40V/110A,Tch175
NP110N04PUG(1)-E1-AY/K 制造商:Renesas Electronics Corporation 功能描述:
NP110N04PUG-E1-AY 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP110N04PUG-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,40V/110A,Tch175
NP110N04PUJ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N04PUJ-E1B-AY 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP110N04PUJ-E2B-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N04PUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR